SK 200 GD 066 T的供应商，SK 200 GD 066 T规格参数，SK 200 GD 066 T的PDF资料

SK 200 GD 066 T /IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

SK 200 GD 066 T的规格信息

图像仅供参考，请参阅规格书

Channel TypeN

Collector Current174 A

Collector to Emitter Shorted Voltage600 V

Collector to Emitter Voltage600 V

ConfigurationArray

Continuous Collector Current174 A

Dimensions55 x 60.25 x 12 mm

Energy Rating25.9 mJ

Gate Capacitance12.2 nF

Gate to Emitter Voltage±20 V

Height0.472" (12mm)

Maximum Operating Temperature+175 °C

Mounting TypeThrough Hole

Number of Pins22

Package TypeGD-T

PolarityN-Channel

Primary TypeSi

Product HeaderN-Channel IGBT Module

SeriesIGBT Series

Temperature Operating Range-40 to +175 °C

Transistor TypeIGBT

TypeTrench

Width2.372" (60.25mm)

SK 200 GD 066 T的供应商,可免费索样

SK 200 GD 066 T及相关型号的PDF资料

型号	功能描述	生产厂商	厂商LOGO	PDF大小	PDF页数	下载地址	相关型号
SK 200 GD 066 T	IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS	SEMIKRON		825.83 Kbytes	共3页		无

SK 200 GD 066 T的全球分销商及价格

销售商	型号	制造商	功能描述	价格
Allied Electronics	SK 200 GD 066 T	SEMIKRON	IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS	+1:$391.27 +6:$370.36 +102:$351.59 +204:$334.61

SK 200 GD 066 T的相关型号